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RTF015N03
l Thermal resistance
Data Sheet
Parameter
Thermal resistance, junction - ambient
Symbol
R thJA *3
R thJA *4
Min.
-
-
Values
Typ.
-
-
Max.
156
391
Unit
°C/W
°C/W
l Electrical characteristics (T a = 25°C)
Parameter
Drain - Source breakdown
voltage
Symbol
V (BR)DSS
Conditions
V GS = 0V, I D = 1mA
Min.
30
Values
Typ.
-
Max.
-
Unit
V
Breakdown voltage
temperature coefficient
ΔV (BR)DSS I D =1mA
ΔT j referenced to 25°C
-
30
-
mV/°C
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
I DSS
I GSS
V GS (th)
ΔV (GS)th
ΔT j
V DS = 30V, V GS = 0V
V GS = 12V, V DS = 0V
V DS = 10V, I D = 1mA
I D =1mA
referenced to 25°C
-
-
0.5
-
-
-
-
- 2.3
1
10
1.5
-
m A
m A
V
mV/°C
V GS =4.5V, I D =1.5A
-
170
240
Static drain - source
on - state resistance
R DS(on)
*5
V GS =4V, I D =1.5A
V GS =2.5V, I D =1.5A
-
-
180
240
250
340
m W
V GS =4.5V, I D =1.5A, T j =125°C
-
270
380
Gate input resistannce
Transconductance
R G
g fs *5
f = 1MHz, open drain
V DS =10V, I D =1.5A
-
1.5
17
2.6
-
-
W
S
*1 Limited only by maximum temperature allowed.
*2 Pw ? 10 m s, Duty cycle ? 1%
*3 Mounted on a seramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
www.rohm.com
? 2013 ROHM Co., Ltd. All rights reserved.
2/11
2013.02 - Rev.B
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